An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

P. S. Gavrina; O. S. Soboleva; A. A. Podoskin; D. N. Romanovich; V. S. Golovin; S. O. Slipchenko; N. A. Pikhtin; T. A. Bagaev; M. A. Ladugin; A. A. Marmalyuk; V. A. Simakov

doi:10.1134/S1063785019040254

An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

Авторы: Gavrina P.S.¹, Soboleva O.S.¹, Podoskin A.A.¹, Romanovich D.N.¹, Golovin V.S.¹, Slipchenko S.O.¹, Pikhtin N.A.¹, Bagaev T.A.², Ladugin M.A.², Marmalyuk A.A.², Simakov V.A.²
Учреждения:
1. Ioffe Physical Technical Institute, Russian Academy of Sciences
2. JSC F.M. Stelmakh POLYUS Research Institute
Выпуск: Том 45, № 4 (2019)
Страницы: 374-378
Раздел: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/208281
DOI: https://doi.org/10.1134/S1063785019040254
ID: 208281

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Аннотация

A method of determining the spatiotemporal dynamics of current in semiconductor heterostructures is proposed that is based on the modulation of external probing radiation transmitted through the crystal. The proposed method has been verified on semiconductor laser thyristors based on AlGaAs/InGaAs/GaAs heterostructures. The results of this experiment qualitatively coincide with the results of previous measurements of the device on-state dynamics.