Email this article Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions
- Authors: Ved’ M.V.1, Dorokhin M.V.1, Lesnikov V.P.1, Pavlov D.A.1, Usov Y.V.1, Kudrin A.V.1, Demina P.B.1, Zdoroveishchev A.V.1, Danilov Y.A.1
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Affiliations:
- Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 45, No 7 (2019)
- Pages: 668-671
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208361
- DOI: https://doi.org/10.1134/S1063785019070149
- ID: 208361
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Abstract
The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.
About the authors
M. V. Ved’
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
M. V. Dorokhin
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
V. P. Lesnikov
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
D. A. Pavlov
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
Yu. V. Usov
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
A. V. Kudrin
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
P. B. Demina
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
A. V. Zdoroveishchev
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
Yu. A. Danilov
Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod
Email: mikhail28ved@gmail.com
Russian Federation,
Nizhny Novgorod, 603600
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