Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.

About the authors

M. V. Ved’

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

M. V. Dorokhin

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

V. P. Lesnikov

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

D. A. Pavlov

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

Yu. V. Usov

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

A. V. Kudrin

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

P. B. Demina

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

A. V. Zdoroveishchev

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

Yu. A. Danilov

Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod

Email: mikhail28ved@gmail.com
Russian Federation, Nizhny Novgorod, 603600

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2019 Pleiades Publishing, Ltd.