Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate


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详细

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.

作者简介

L. Lunin

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; Platov South Russian State Polytechnic University

编辑信件的主要联系方式.
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

O. Devitskii

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; North Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Stavropol, 355009

I. Sysoev

North Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355009

A. Pashchenko

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; Platov South Russian State Polytechnic University

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

I. Kas’yanov

North Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355009

D. Nikulin

North Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355009

V. Irkha

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

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