Vol 42, No 12 (2016)

The atomic structure of carbon materials is studied using the example of pyrocarbon and boronrich pyrocarbon by means of the method of reconstruction of the wave function in transmission electron microscopy. It is shown that the digital processing of the phase distributions of these functions allows us to find the average distance between the basal planes. Using the method of molecular dynamics for the formation of the test structures and obtaining for them the calculated phase distributions, the effect of depletion of the basal planes of the carbon atoms on the interplanar distance in the pyrocarbon materials is quantified.

Photoemission studies of the electronic structure of the vicinal SiC(100) 4° surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4° interface have been performed for the first time. The modification of spectra of the valence band and C 1s and Si 2p core levels in the process of formation of the Cs/SiC(100) 4° interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1s core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4° surface results in intercalation of graphene islands on SiC(100) 4° with Cs atoms.

The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.

Fiber-coupled semiconductor lasers have been studied when pumped by high-power short electrical pulses of 5 ns width and leading front duration below 1 ns. In this pumping regime, it is possible to ensure significant sharpening of output pulses, the duration of which decreases below 80 ps for a single-mode laser and below 120 ps for a broad aperture multimode laser at an output peak optical power as high as 1.5 and 27 W, respectively.

Studying the mechanism of Alfvén wave generation in plasma is important, since the interaction of these waves with energetic particles in tokamak-type reactors can increase the losses of energy and particles with the corresponding decrease in the efficiency of plasma heating and, under certain conditions, lead to the damage of structural elements of the system. Despite the previous detailed investigations of the excitation of Alfvén waves by superthermal particles in regimes with additional heating, the physics of Alfvén mode generation in discharges with ohmic heating of plasma is still not sufficiently studied. We have established that a significant factor inf luencing the development of Alfvén oscillations in ohmic discharge is the presence of runaway electrons. A physical mechanism explaining this relationship is proposed.