Normally off transistors based on in situ passivated AlN/GaN heterostructures

K. S. Zhuravlev; T. V. Malin; V. G. Mansurov; V. E. Zemlyakov; V. I. Egorkin; Ya. M. Parnes

doi:10.1134/S1063785016070312

Normally off transistors based on in situ passivated AlN/GaN heterostructures

作者: Zhuravlev K.S.¹^,2, Malin T.V.¹, Mansurov V.G.¹, Zemlyakov V.E.³, Egorkin V.I.³, Parnes Y.M.⁴
隶属关系:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
2. Novosibirsk State University
3. National Research University of Electronic Technology (MIET)
4. Svetlana-Elektronpribor Company
期: 卷 42, 编号 7 (2016)
页面: 750-753
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/200207
DOI: https://doi.org/10.1134/S1063785016070312
ID: 200207

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A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.