Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

M. S. Buyalo; I. M. Gadzhiyev; N. D. Il’inskaya; A. A. Usikova; I. I. Novikov; L. Ya. Karachinsky; E. S. Kolodeznyi; V. E. Bougrov; A. Yu. Egorov; E. L. Portnoi

doi:10.1134/S1063785018020189

Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

作者: Buyalo M.S.¹, Gadzhiyev I.M.¹, Il’inskaya N.D.¹, Usikova A.A.¹, Novikov I.I.²^,3, Karachinsky L.Y.²^,3, Kolodeznyi E.S.³, Bougrov V.E.³, Egorov A.Y.³, Portnoi E.L.¹
隶属关系:
1. Ioffe Institute
2. “Connector Optics, LLC”
3. ITMO University
期: 卷 44, 编号 2 (2018)
页面: 174-177
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/207382
DOI: https://doi.org/10.1134/S1063785018020189
ID: 207382

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详细

We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.