Мақаланы E-mail арқылы жіберу BaTiO3/LaSrMnO3 Heterostructure Grown on Sapphire for Ferroelectric Tunneling Junctions
- Авторлар: Gagarin A.G.1, Tumarkin A.V.1, Sapego E.N.1, Kunkel’ T.S.2,3, Stozharov V.M.4
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Мекемелер:
- St. Petersburg Electrotechnical University LETI
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- The Herzen State Pedagogical University of Russia
- Шығарылым: Том 45, № 2 (2019)
- Беттер: 152-154
- Бөлім: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208219
- DOI: https://doi.org/10.1134/S1063785019020263
- ID: 208219
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Аннотация
BaTiO3/LaSrMnO3 (BTO/LSMO) structures with a ferroelectric layer thickness of 10 nm have been formed on r-cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.
Авторлар туралы
A. Gagarin
St. Petersburg Electrotechnical University LETI
Хат алмасуға жауапты Автор.
Email: AGGagarin@gmail.com
Ресей, St. Petersburg, 197376
A. Tumarkin
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
Ресей, St. Petersburg, 197376
E. Sapego
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
Ресей, St. Petersburg, 197376
T. Kunkel’
Peter the Great St. Petersburg Polytechnic University; Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: AGGagarin@gmail.com
Ресей, St. Petersburg, 195251; St. Petersburg, 194021
V. Stozharov
The Herzen State Pedagogical University of Russia
Email: AGGagarin@gmail.com
Ресей, St. Petersburg, 191186
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