Enviar artigo por via de e-mail BaTiO3/LaSrMnO3 Heterostructure Grown on Sapphire for Ferroelectric Tunneling Junctions
- Autores: Gagarin A.G.1, Tumarkin A.V.1, Sapego E.N.1, Kunkel’ T.S.2,3, Stozharov V.M.4
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Afiliações:
- St. Petersburg Electrotechnical University LETI
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- The Herzen State Pedagogical University of Russia
- Edição: Volume 45, Nº 2 (2019)
- Páginas: 152-154
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208219
- DOI: https://doi.org/10.1134/S1063785019020263
- ID: 208219
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Resumo
BaTiO3/LaSrMnO3 (BTO/LSMO) structures with a ferroelectric layer thickness of 10 nm have been formed on r-cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.
Sobre autores
A. Gagarin
St. Petersburg Electrotechnical University LETI
Autor responsável pela correspondência
Email: AGGagarin@gmail.com
Rússia, St. Petersburg, 197376
A. Tumarkin
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
Rússia, St. Petersburg, 197376
E. Sapego
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
Rússia, St. Petersburg, 197376
T. Kunkel’
Peter the Great St. Petersburg Polytechnic University; Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: AGGagarin@gmail.com
Rússia, St. Petersburg, 195251; St. Petersburg, 194021
V. Stozharov
The Herzen State Pedagogical University of Russia
Email: AGGagarin@gmail.com
Rússia, St. Petersburg, 191186
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