Elastic Scattering of Neutral Fluorine on Si, O, C, and H Atoms in the Range of the Relative Kinetic Energies of 2–200 eV
- Authors: Palov A.1, Zhang J.2, Baklanov M.2, Wei S.2
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Affiliations:
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
- Institute of Electronic Information Engineering, North China University of Technology
- Issue: Vol 45, No 12 (2019)
- Pages: 1187-1190
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208497
- DOI: https://doi.org/10.1134/S1063785019120113
- ID: 208497
Cite item
Abstract
Binary interatomic potentials F–F, F–Si, F–O, F–C, and F–H are calculated from the first principles (ab initio) on the basis of the multi-configuration method of self-consistent field (CAS-SCF) with a basic set of atomic wave functions aug-pp-AV6Z and are used to calculate phase shifts and cross sections of elastic scattering of atoms in the range of relative kinetic energies of 2–200 eV. It is expected that the obtained elastic scattering cross sections will be useful for a description of sputtering and etching of porous organosilicate films with ethylene bridges used in modern nanoelectronics.
Keywords
About the authors
A. Palov
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Author for correspondence.
Email: a.palov@mail.ru
Russian Federation, Moscow, 119991
Jing Zhang
Institute of Electronic Information Engineering, North China University of Technology
Email: weishuhua@ncut.edu.cn
China, Beijing
M. Baklanov
Institute of Electronic Information Engineering, North China University of Technology
Email: weishuhua@ncut.edu.cn
China, Beijing
Shuhua Wei
Institute of Electronic Information Engineering, North China University of Technology
Author for correspondence.
Email: weishuhua@ncut.edu.cn
China, Beijing
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