Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors based on organic polymers and inorganic nanoparticles
- 作者: Chikalova-Luzina O.P.1, Aleshin A.N.1, Vyatkin V.M.2
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隶属关系:
- Ioffe Physical Technical Institute
- St. Petersburg State Electrotechnical University
- 期: 卷 42, 编号 2 (2016)
- 页面: 131-134
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/197084
- DOI: https://doi.org/10.1134/S106378501602005X
- ID: 197084
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详细
Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors with composite active layers based on the PFO organic polymer and inorganic ZnO nanoparticles are considered. Theoretical analysis of the radiative recombination in the accumulation layer of the structure is performed in the framework of a model permitting one to obtain an analytical description of the process. An expression for the total recombination rate has been obtained and numerical calculations have been carried out. Correspondence between the calculation results and experimental data has been obtained for the integral intensity of electrical luminescence in the composite structure under consideration.
作者简介
O. Chikalova-Luzina
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Aleshin
Ioffe Physical Technical Institute
Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Vyatkin
St. Petersburg State Electrotechnical University
Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 197376
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