Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors based on organic polymers and inorganic nanoparticles


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Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors with composite active layers based on the PFO organic polymer and inorganic ZnO nanoparticles are considered. Theoretical analysis of the radiative recombination in the accumulation layer of the structure is performed in the framework of a model permitting one to obtain an analytical description of the process. An expression for the total recombination rate has been obtained and numerical calculations have been carried out. Correspondence between the calculation results and experimental data has been obtained for the integral intensity of electrical luminescence in the composite structure under consideration.

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O. Chikalova-Luzina

Ioffe Physical Technical Institute

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Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 194021

A. Aleshin

Ioffe Physical Technical Institute

Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 194021

V. Vyatkin

St. Petersburg State Electrotechnical University

Email: o_chikalova@mail.ru
俄罗斯联邦, St. Petersburg, 197376

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