A study of specific features of the electronic spectrum of quantum dots in CdSe semiconductor

A. I. Mikhailov; V. F. Kabanov; I. A. Gorbachev; E. G. Glukhovskoi

doi:10.1134/S1063785016080137

A study of specific features of the electronic spectrum of quantum dots in CdSe semiconductor

Авторлар: Mikhailov A.I.¹, Kabanov V.F.¹, Gorbachev I.A.¹, Glukhovskoi E.G.¹
Мекемелер:
1. Saratov State University
Шығарылым: Том 42, № 8 (2016)
Беттер: 796-798
Бөлім: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/200387
DOI: https://doi.org/10.1134/S1063785016080137
ID: 200387

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Monolayers of CdSe/CdS/ZnS quantum dots (QDs) formed on the aqueous subphase and transferred to solid substrates by the Langmuir–Blodgett method have been studied. The samples obtained were examined by transmission electron microscopy, atomic-force microscopy, and scanning tunnel microscopy. The structure of the QD monolayer obtained on the substrate was analyzed. Specific features of the electronic spectrum of the quantum objects formed in the samples under study were determined.