Growth of Y 3 Fe 5 O 12 /GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

A. K. Kaveev; V. E. Bursian; S. V. Gastev; B. B. Krichevtsov; S. M. Suturin; M. P. Volkov; N. S. Sokolov

doi:10.1134/S1063785016120075

Growth of Y₃Fe₅O₁₂/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

Авторлар: Kaveev A.K.¹, Bursian V.E.¹, Gastev S.V.¹, Krichevtsov B.B.¹, Suturin S.M.¹, Volkov M.P.¹, Sokolov N.S.¹
Мекемелер:
1. Ioffe Physical Technical Institute
Шығарылым: Том 42, № 12 (2016)
Беттер: 1156-1158
Бөлім: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/202118
DOI: https://doi.org/10.1134/S1063785016120075
ID: 202118

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y₃Fe₅O₁₂ on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the “easy-magnetic plane” type was found. The gyromagnetic ratio and the demagnetizing field 4πM_S were calculated.