Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

A. E. Marichev; R. V. Levin; A. B. Gordeeva; G. S. Gagis; V. I. Kuchinskii; B. V. Pushnyi; N. D. Prasolov; N. M. Shmidt

doi:10.1134/S1063785017010230

Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

作者: Marichev A.E.¹, Levin R.V.¹, Gordeeva A.B.¹, Gagis G.S.¹, Kuchinskii V.I.¹, Pushnyi B.V.¹, Prasolov N.D.¹, Shmidt N.M.¹
隶属关系:
1. Ioffe Physicotechnical Institute
期: 卷 43, 编号 1 (2017)
页面: 88-91
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/202594
DOI: https://doi.org/10.1134/S1063785017010230
ID: 202594

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Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-solution layers in InGaAsP/InP heterostructures with indium content up to 80% can decrease the probability of spinodal decomposition of the solid solution, enhance its photoluminescence intensity, and increase the efficiency of laser-radiation conversion.