A Study of Ohmic Contacts of Power Photovoltaic Converters

A. V. Malevskaya; V. P. Khvostikov; F. Yu. Soldatenkov; O. A. Khvostikova; A. S. Vlasov; V. M. Andreev

doi:10.1134/S1063785019010140

A Study of Ohmic Contacts of Power Photovoltaic Converters

Авторы: Malevskaya A.V.¹, Khvostikov V.P.¹, Soldatenkov F.Y.¹, Khvostikova O.A.¹, Vlasov A.S.¹, Andreev V.M.¹
Учреждения:
1. Ioffe Institute
Выпуск: Том 44, № 12 (2018)
Страницы: 1198-1200
Раздел: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/208163
DOI: https://doi.org/10.1134/S1063785019010140
ID: 208163

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Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.