A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range
- Autores: Blokhin S.A.1, Bobrov M.A.1, Kuzmenkov A.G.1,2, Blokhin A.A.1, Vasil’ev A.P.1,2, Guseva Y.A.1, Kulagina M.M.1, Karpovsky I.O.1,3, Zadiranov Y.M.1, Troshkov S.I.1, Prasolov N.D.1,4, Brunkov P.N.1,4, Levitsky V.S.5, Lisak V.1,4, Maleev N.A.1, Ustinov V.M.1,2
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Afiliações:
- Ioffe Physical Technical Institute
- Scientific and Technological Center of Microelectronics and Submicron Heterostructures
- St. Petersburg State Electrotechnical University (LETI)
- St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Scientific and Technological Center of Thin-Film Technologies in Power Engineering
- Edição: Volume 42, Nº 10 (2016)
- Páginas: 1049-1053
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/201790
- DOI: https://doi.org/10.1134/S1063785016100199
- ID: 201790
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Resumo
Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSELs) are carried out. It is shown that the reflectivity of the dielectric DBRs based on SiO2/TiO2 decreases due to the polycrystalline structure of the TiO2 layers, which causes diffusive scattering of light. In contrast, amorphous Ta2O5 layers is characterized by a low surface roughness and low fluctuation in the refractive index. Single-mode ICC-VCSELs in the 980-nm spectral range with dielectric DBR based on SiO2/Ta2O5 with a threshold current less than 0.27 mA, electric resistance of less than 200 Ω, and differential efficiency of more than 0.8 W/A are demonstrated.
Sobre autores
S. Blokhin
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Bobrov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Kuzmenkov
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
A. Blokhin
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Vasil’ev
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
Yu. Guseva
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Kulagina
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Karpovsky
Ioffe Physical Technical Institute; St. Petersburg State Electrotechnical University (LETI)
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197376
Yu. Zadiranov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Troshkov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Prasolov
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
P. Brunkov
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
V. Levitsky
Scientific and Technological Center of Thin-Film Technologies in Power Engineering
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Lisak
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
N. Maleev
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Ustinov
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
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