All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

A. A. Podoskin; I. S. Shashkin; S. O. Slipchenko; N. A. Pikhtin; I. S. Tarasov

doi:10.1134/S1063785017010254

All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

作者: Podoskin A.A.¹, Shashkin I.S.¹, Slipchenko S.O.¹, Pikhtin N.A.¹, Tarasov I.S.¹
隶属关系:
1. Ioffe Physical Technical Institute
期: 卷 43, 编号 1 (2017)
页面: 101-103
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/202760
DOI: https://doi.org/10.1134/S1063785017010254
ID: 202760

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详细

All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry–Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.