UV-assisted growth of transparent conducting layers based on zinc oxide
- Авторы: Abduev A.K.1, Asvarov A.S.1, Akhmedov A.K.1, Emirov R.M.2, Belyaev V.V.3
-
Учреждения:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Dagestan State University
- Moscow Region State University
- Выпуск: Том 43, № 11 (2017)
- Страницы: 1016-1019
- Раздел: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/206479
- DOI: https://doi.org/10.1134/S1063785017110153
- ID: 206479
Цитировать
Аннотация
A comparative study of the microstructure and optical and electrical characteristics of gallium-doped ZnO films synthesized by magnetron sputtering with and without assistance to the growth process by UV radiation has been carried out. It was found that the UV assistance to the growth process of ZnO-based transparent conducting layers improves their electrical characteristics because of the formation of additional donor centers and the lower carrier scattering at grain boundaries, without any strong inf luence on the layer morphology and on the average optical transmittance in the visible spectral range.
Об авторах
A. Abduev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: cht-if-ran@mail.ru
Россия, Makhachkala, Dagestan, 367003
A. Asvarov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Автор, ответственный за переписку.
Email: cht-if-ran@mail.ru
Россия, Makhachkala, Dagestan, 367003
A. Akhmedov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: cht-if-ran@mail.ru
Россия, Makhachkala, Dagestan, 367003
R. Emirov
Dagestan State University
Email: cht-if-ran@mail.ru
Россия, Makhachkala, Dagestan, 367000
V. Belyaev
Moscow Region State University
Email: cht-if-ran@mail.ru
Россия, Moscow, 105005
Дополнительные файлы
