High-Efficiency AlGaAs/GaAs Photovoltaic Converters with Edge Input of Laser Light
- Autores: Khvostikov V.P.1, Pokrovskii P.V.1, Khvostikova O.A.1, Pan’chak A.N.1, Andreev V.M.1
-
Afiliações:
- Ioffe Physical Technical Institute
- Edição: Volume 44, Nº 9 (2018)
- Páginas: 776-778
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/207880
- DOI: https://doi.org/10.1134/S1063785018090079
- ID: 207880
Citar
Resumo
High-efficiency photovoltaic converters (PVCs) have been developed and fabricated by liquidphase epitaxy in the AlGaAs–GaAs system with laser light (λ = 850 nm) introduced through the edge surface in parallel to the plane of the p–n junction of the device structure. To raise the efficiency of light “capture” by the p–n junction, an AlxGa1–xAs waveguide layer is formed, in which the content of aluminum gradually varies from x = 0.55 to 0.15 so that the refractive index gradient is created in this layer and light beams are diverted toward the p–n junction. When a PVC (having no antireflection coating) is exposed to 0.1- to 0.2-W laser light, an efficiency of 41.5% is obtained. Depositing an antireflection coating on the edge surface of a PVC raises its efficiency to 55%.
Sobre autores
V. Khvostikov
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: vlkhv@scell.ioffe.ru
Rússia, St. Petersburg, 194021
P. Pokrovskii
Ioffe Physical Technical Institute
Email: vlkhv@scell.ioffe.ru
Rússia, St. Petersburg, 194021
O. Khvostikova
Ioffe Physical Technical Institute
Email: vlkhv@scell.ioffe.ru
Rússia, St. Petersburg, 194021
A. Pan’chak
Ioffe Physical Technical Institute
Email: vlkhv@scell.ioffe.ru
Rússia, St. Petersburg, 194021
V. Andreev
Ioffe Physical Technical Institute
Email: vlkhv@scell.ioffe.ru
Rússia, St. Petersburg, 194021
Arquivos suplementares
