Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures


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Resumo

InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to ~50°C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.

Sobre autores

M. Maksimov

St. Petersburg Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021

Yu. Shernyakov

St. Petersburg Academic University, Russian Academy of Sciences; Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194021

F. Zubov

St. Petersburg Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021

I. Novikov

St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)

Email: zhukale@gmail.com
Rússia, St. Petersburg, 197101

A. Gladyshev

St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)

Email: zhukale@gmail.com
Rússia, St. Petersburg, 197101

L. Karachinsky

Ioffe Physical Technical Institute, Russian Academy of Sciences; Connector Optics LLC

Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194292

D. Denisov

Connector Optics LLC; St. Petersburg Electrotechnical University LETI

Email: zhukale@gmail.com
Rússia, St. Petersburg, 194292; St. Petersburg, 197376

S. Rochas

St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)

Email: zhukale@gmail.com
Rússia, St. Petersburg, 197101

E. Kolodeznyi

St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)

Email: zhukale@gmail.com
Rússia, St. Petersburg, 197101

A. Egorov

St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)

Email: zhukale@gmail.com
Rússia, St. Petersburg, 197101

A. Zhukov

St. Petersburg Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University LETI

Autor responsável pela correspondência
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 197376

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