AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters
- Авторы: Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Alfimova D.L.1, Danilina E.M.1
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Учреждения:
- Federal Research Center Southern Scientific Center
- Выпуск: Том 44, № 12 (2018)
- Страницы: 1049-1051
- Раздел: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208050
- DOI: https://doi.org/10.1134/S1063785018120301
- ID: 208050
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Аннотация
Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.
Об авторах
L. Lunin
Federal Research Center Southern Scientific Center
Автор, ответственный за переписку.
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don
M. Lunina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don
A. Pashchenko
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don
D. Alfimova
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don
E. Danilina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don
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