AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters

L. S. Lunin; M. L. Lunina; A. S. Pashchenko; D. L. Alfimova; E. M. Danilina

doi:10.1134/S1063785018120301

AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters

Authors: Lunin L.S.¹, Lunina M.L.¹, Pashchenko A.S.¹, Alfimova D.L.¹, Danilina E.M.¹
Affiliations:
1. Federal Research Center Southern Scientific Center
Issue: Vol 44, No 12 (2018)
Pages: 1049-1051
Section: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/208050
DOI: https://doi.org/10.1134/S1063785018120301
ID: 208050

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Abstract

Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.