Quantum efficiency of 4 H -SiC detectors within the range of 114–400 nm

E. V. Kalinina; G. N. Violina; V. P. Belik; A. V. Nikolaev; V. V. Zabrodskii

doi:10.1134/S1063785016100229

Quantum efficiency of 4H-SiC detectors within the range of 114–400 nm

作者: Kalinina E.V.¹, Violina G.N.², Belik V.P.¹, Nikolaev A.V.¹, Zabrodskii V.V.¹
隶属关系:
1. Ioffe Physical Technical Institute
2. St. Petersburg Electrotechnical University (LETI)
期: 卷 42, 编号 10 (2016)
页面: 1057-1059
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/201832
DOI: https://doi.org/10.1134/S1063785016100229
ID: 201832

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详细

Electrical and spectrometric characteristics of 4H-SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4H-SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.