Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons
- Autores: Ivanov N.A.1, Lobanov O.V.1, Pashuk V.V.1, Prygunov M.O.2, Sizova K.G.3
-
Afiliações:
- B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”
- LLC O2 Svetovye Sistemy
- LLC NPC Granat
- Edição: Volume 44, Nº 11 (2018)
- Páginas: 973-975
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208017
- DOI: https://doi.org/10.1134/S106378501811010X
- ID: 208017
Citar
Resumo
The distribution of pixels with high-value dark current in CMOS image sensors irradiated by protons with the energy of 1000 MeV and neutrons with a continuous spectrum simulating the energy spectrum of atmospheric neutrons is explored. Data on generation of spike clusters in the irradiated sensors and the exposure time influence on the cluster parameters are obtained.
Sobre autores
N. Ivanov
B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
O. Lobanov
B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
V. Pashuk
B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”
Email: ksizova@npcgranat.ru
Rússia, Gatchina, Leningrad oblast, 188300
M. Prygunov
LLC O2 Svetovye Sistemy
Email: ksizova@npcgranat.ru
Rússia, St. Petersburg, 196088
K. Sizova
LLC NPC Granat
Autor responsável pela correspondência
Email: ksizova@npcgranat.ru
Rússia, St. Petersburg, 194021
Arquivos suplementares
