Structure and Morphology of Zinc Oxide Nanorods
- Authors: Irzhak A.V.1,2, Koledov V.V.3, Lega P.V.3, Kuchin D.S.3, Orlov A.P.3, Tabachkova N.Y.1, Mazaev P.V.3, von Gratowski S.V.3, Shavrov V.G.3, Shelyakov A.V.4, Red’kin A.N.2, Evstaf’eva M.V.2
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Affiliations:
- National University of Science and Technology MISiS
- Institute of Microelectronics Technology and High Purity Materials
- Kotel’nikov Institute of Radio Engineering and Electronics
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Issue: Vol 63, No 1 (2018)
- Pages: 75-79
- Section: Nanoelectronics
- URL: https://journal-vniispk.ru/1064-2269/article/view/199410
- DOI: https://doi.org/10.1134/S1064226918010072
- ID: 199410
Cite item
Abstract
The properties of nanorods made of high-energy-gap ZnxMg1 – xO semiconductors are experimentally investigated using the new system of 3D manipulation of individual nanospecimens. The technology used to prepare ZnxMg1 – xO nanorods via gas-phase deposition on a substrate, the process whereby individual nanorods are selected by means of nanocomposite tweezers with the shape-memory effect in the vacuum chamber of a two-beam scanning microscope, and the results obtained when their structure and morphology are experimentally studied using transmission electron spectroscopy are described. The prospects that nanophotonic, nanosensorial, and nanoelectronic devices can be fabricated from ZnxMg1 – xO nanorods via the new nanomanipulation technique are discussed.
About the authors
A. V. Irzhak
National University of Science and Technology MISiS; Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 119049; Chernogolovka, Moscow oblast, 142432
V. V. Koledov
Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
P. V. Lega
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
D. S. Kuchin
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
A. P. Orlov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
N. Yu. Tabachkova
National University of Science and Technology MISiS
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 119049
P. V. Mazaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
S. V. von Gratowski
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
V. G. Shavrov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 125009
A. V. Shelyakov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: victor_koledov@mail.ru
Russian Federation, Moscow, 115409
A. N. Red’kin
Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
M. V. Evstaf’eva
Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
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