Email this article High-Voltage Solid State Switches for Grid Modulators of High-Power Microwave Devices
- Authors: Maslennikov S.P.1, Serebryakova A.S.1,2
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Affiliations:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Torii Research & Production Enterprise
- Issue: Vol 63, No 1 (2018)
- Pages: 71-74
- Section: Microwave Electronics
- URL: https://journal-vniispk.ru/1064-2269/article/view/199414
- DOI: https://doi.org/10.1134/S1064226918010096
- ID: 199414
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Abstract
Microsecond high-voltage solid state switches based on metal–oxide–semiconductor field-effect transistors for application in pulse grid modulators of high-power microwave devices have been developed and investigated. Stable switching ranges of the switches based on unipolar and bipolar control circuits have been established. Combined switches with operating voltages of up to 10 kV and pulse currents of up to 12 A have been experimentally implemented.
About the authors
S. P. Maslennikov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Author for correspondence.
Email: spmaslennikov@mephi.ru
Russian Federation, Moscow, 115409
A. S. Serebryakova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); Torii Research & Production Enterprise
Email: spmaslennikov@mephi.ru
Russian Federation, Moscow, 115409; Moscow, 117393
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