Transmission Spectra of Shallow-Layered Semiconductor‒Insulator Structure
- Authors: Fedorova I.V.1, Sementsov D.I.1
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Affiliations:
- Ulyanovsk State University
- Issue: Vol 63, No 1 (2018)
- Pages: 64-70
- Section: Radio Phenomena in Solids and Plasma
- URL: https://journal-vniispk.ru/1064-2269/article/view/199418
- DOI: https://doi.org/10.1134/S1064226918010059
- ID: 199418
Cite item
Abstract
The features of transmission spectra characterizing the layers of a shallow-layered semiconductor‒insulator medium are investigated under the action of a magnetic field. In this case, n- and p-type semiconductors are analyzed. It is demonstrated that, at H0 ≠ 0, the frequency gap, i.e., the zone eliminating wave transmission through a structure, is formed in the spectrum. In the absence of absorption near the lower zone edge (resonance frequency), the system of alternating narrow transmission and nontransmission zones concentrating with an approach to the resonance frequency is established to appear in the spectrum. It is revealed that oscillations arising near the frequency gap are smoothed with allowance for absorption in the structure.
About the authors
I. V. Fedorova
Ulyanovsk State University
Email: sementsovdi@mail.ru
Russian Federation, Ulyanovsk, 432970
D. I. Sementsov
Ulyanovsk State University
Author for correspondence.
Email: sementsovdi@mail.ru
Russian Federation, Ulyanovsk, 432970
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