Email this article Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm
- Authors: Boltar K.O.1,2, Irodov N.A.1, Sednev M.V.1, Marmalyuk A.A.3, Ladugin M.A.1, Ryaboshtan Y.L.3
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Affiliations:
- Orion R&P Association
- Moscow Institute of Physics and Technology (State University)
- Stel’makh Research Institute “Polyus”
- Issue: Vol 64, No 3 (2019)
- Pages: 283-285
- Section: Article
- URL: https://journal-vniispk.ru/1064-2269/article/view/200492
- DOI: https://doi.org/10.1134/S1064226919030021
- ID: 200492
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Abstract
I–V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In0.67Ga0.33As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.
About the authors
K. O. Boltar
Orion R&P Association; Moscow Institute of Physics and Technology (State University)
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. A. Irodov
Orion R&P Association
Email: bereg@niipolyus.ru
Russian Federation, Moscow, 111538
M. V. Sednev
Orion R&P Association
Email: bereg@niipolyus.ru
Russian Federation, Moscow, 111538
A. A. Marmalyuk
Stel’makh Research Institute “Polyus”
Author for correspondence.
Email: bereg@niipolyus.ru
Russian Federation, Moscow, 117342
M. A. Ladugin
Orion R&P Association
Email: bereg@niipolyus.ru
Russian Federation, Moscow, 111538
Yu. L. Ryaboshtan
Stel’makh Research Institute “Polyus”
Email: bereg@niipolyus.ru
Russian Federation, Moscow, 117342
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