Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
- Authors: Zverev A.V.1, Suslyakov A.O.1, Sabinina I.V.1, Sidorov G.Y.1, Yakushev M.V.1, Kuzmin V.D.1, Varavin V.S.1, Remesnik V.G.1, Makarov Y.S.1, Predein A.V.1, Gorshkov D.V.1, Dvoretsky S.A.1, Vasil’ev V.V.1, Sidorov Y.G.1, Latyshev A.V.1, Kremis I.I.2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Design and Technology Institute of Applied Microelectronics
- Issue: Vol 64, No 9 (2019)
- Pages: 1024-1029
- Section: Article
- URL: https://journal-vniispk.ru/1064-2269/article/view/201239
- DOI: https://doi.org/10.1134/S1064226919090171
- ID: 201239
Cite item
Abstract
Abstract—Design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μm with a long wavelength limit of sensitivity at 0.5 to approximately 9.5 μm were performed. The circuit and topology were developed, according to which matrix high-speed multiplexers are manufactured in the form of 384 × 288 elements with a step of 25 microns, which provide operating modes at a clock frequency of up to 20 MHz. The 384 × 288 element hybrid photodetector (PD) format in 25 μm increments has an average Noise Equivalent Temperature Difference (NETD) of less than 30 mK, while the number of working elements was more than 97%. Examples are given of using the microscanning system to reduce defective pixels in an image frame and/or increase the frame format to 768 × 576. It is shown that as a result of the use of microscans in a thermal imaging channel based on the developed PD during the transition to the 768 × 576 format, an improvement in spatial resolution of 1.4 times was obtained for the same minimum resolved temperature difference (MRTD), while the MRTD at a frequency of 0.44 mrad-1 decreased from 1.6 to 0.9 K compared to the original 384 × 288 format.
Keywords
About the authors
A. V. Zverev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
A. O. Suslyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
I. V. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. D. Kuzmin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. G. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
Yu. S. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
A. V. Predein
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
D. V. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: vas@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
I. I. Kremis
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,Design and Technology Institute of Applied Microelectronics
Author for correspondence.
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
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