Renormalization of the Landé Factor and Effective Mass in Small Spherical Quantum Dots

Abstract

Using the modified Kane theory, a model has been built for describing the formation of the effective mass and g factor of bound electrons in quantum dots several nanometers in size. It is shown that these values ​​depend critically on the dot size and are significantly different from the corresponding values ​​for the bulk semiconductor. The effective mass and g factor affect the binding energy of an electron on a quantum dot in a magnetic field and are determined by this binding energy, which ultimately forms the local band structure in the vicinity of the quantum dot. In the covariant InAs/AlSb heterostructure, the characteristics have been calculated for which a quantum dot localizes no more than one electron without localizing holes and therefore can serve as a prototype of a solid-state qubit with the controlled g factor.