Email this article Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
- Authors: Varavin V.S.1, Vasil’ev V.V.1, Dvoretskii S.A.2,1, Mikhailov N.N.1, Yakushev M.V.1, Sidorov G.Y.1, Voitsekhovskii A.V.2,3, Nesmelov S.N.2,3, Dzyadukh S.M.2,3
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Affiliations:
- A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
- Issue: Vol 60, No 2 (2017)
- Pages: 360-370
- Section: Article
- URL: https://journal-vniispk.ru/1064-8887/article/view/238015
- DOI: https://doi.org/10.1007/s11182-017-1083-x
- ID: 238015
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Abstract
In a temperature range of 9–200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1–xTe (x = 0.22–0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.
About the authors
V. S. Varavin
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk
V. V. Vasil’ev
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk
S. A. Dvoretskii
National Research Tomsk State University; A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk; Novosibirsk
N. N. Mikhailov
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk
M. V. Yakushev
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk
G. Yu. Sidorov
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk
A. V. Voitsekhovskii
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk; Tomsk
S. N. Nesmelov
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk; Tomsk
S. M. Dzyadukh
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk; Tomsk
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