Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

T. Z. Lygdenova; V. M. Kalygina; V. A. Novikov; I. A. Prudaev; O. P. Tolbanov; A. V. Tyazhev

doi:10.1007/s11182-018-1302-0

Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Authors: Lygdenova T.Z.¹, Kalygina V.M.¹, Novikov V.A.¹, Prudaev I.A.¹, Tolbanov O.P.¹, Tyazhev A.V.¹
Affiliations:
1. National Research Tomsk State University
Issue: Vol 60, No 11 (2018)
Pages: 1911-1916
Section: Article
URL: https://journal-vniispk.ru/1064-8887/article/view/239609
DOI: https://doi.org/10.1007/s11182-018-1302-0
ID: 239609

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Abstract

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е_t located 0.95 eV below the conduction band bottom.