Enviar artigo por via de e-mail Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells
- Autores: Vasilchenko A.A.1,2, Kopytov G.F.2, Krivobok V.S.3,4
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Afiliações:
- Kuban State Technological University
- Kuban State University
- P. N. Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- Edição: Volume 61, Nº 2 (2018)
- Páginas: 205-210
- Seção: Physics of Semiconductors and Dielectrics
- URL: https://journal-vniispk.ru/1064-8887/article/view/240133
- DOI: https://doi.org/10.1007/s11182-018-1386-6
- ID: 240133
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Resumo
An analytical expression is obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) in shallow quantum wells. It is shown that in the Si/Si1–xGex/Si structures with small x, the EHL contains light and heavy holes. With increasing x, the transition of EHL to a state with heavy holes occurs, and the equilibrium density of electron-hole pairs strongly decreases. The effect of an external electric field on the EHL properties is studied.
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Sobre autores
A. Vasilchenko
Kuban State Technological University; Kuban State University
Autor responsável pela correspondência
Email: a_vas2002@mail.ru
Rússia, Krasnodar; Krasnodar
G. Kopytov
Kuban State University
Email: a_vas2002@mail.ru
Rússia, Krasnodar
V. Krivobok
P. N. Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: a_vas2002@mail.ru
Rússia, Moscow; Moscow
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