Email this article Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures
- Authors: Douhan R.M.1, Kokhanenko A.P.1, Lozovoy K.A.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 61, No 7 (2018)
- Pages: 1194-1201
- Section: Article
- URL: https://journal-vniispk.ru/1064-8887/article/view/240727
- DOI: https://doi.org/10.1007/s11182-018-1517-0
- ID: 240727
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Abstract
Infrared photodetectors with germanium quantum dots on silicon are considered. Some characteristics of such detectors are calculated, namely: dark current and detectivity in the modes of limitation by background and generation-recombination noises. A comparison is also made of the performance of quantum-dot infrared detectors with the performance of HgCdTe detectors.
About the authors
R. M. H. Douhan
National Research Tomsk State University
Author for correspondence.
Email: rahaf.douhan@gmail.com
Russian Federation, Tomsk
A. P. Kokhanenko
National Research Tomsk State University
Email: rahaf.douhan@gmail.com
Russian Federation, Tomsk
K. A. Lozovoy
National Research Tomsk State University
Email: rahaf.douhan@gmail.com
Russian Federation, Tomsk
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