Heterostructures Based on Magnetic and Topological Insulators

Abstract

Using ab initio calculations, an investigation of the electronic structure of the magnetic insulator/topological insulator heterostructures is performed. Bismuth selenide is used as a topological insulator and monolayers of vanadium-based van der Waals materials VSe₂ and VBi₂Se₄ – as magnetic materials. The formation of the latter one is possible via diffusion of the deposited vanadium and selenium atoms into the surface block of the layered Bi₂Se₃. A comparison of the electronic structure of the two heterostructures is performed and peculiar features of interaction of the Dirac state of the topological insulator with the magnetic states of vanadium are revealed.