Hardness and electrical resistivity of Al–13 wt % Mg2Si pseudoeutectic alloy


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Abstract

In the present work, effect of growth rates on microhardness, electrical properties and microstructure for directionally solidified Al–13 wt % Mg2Si pseudoeutectic alloy at a constant temperature gradient were studied. Directional solidification process were carried out with five different growth rates (V = 8.33–175.0 μm/s) at a constant temperature gradient (G = 6.68 K/mm) by using a Bridgman type directional solidification furnace. Microstructure of directionally solidified Al–13 wt % Mg2Si pseudoeutectic alloy was observed as Mg2Si coral-like structure phase dispersed into primary α-Al phase matrix. The electrical resistivity for Al–13 wt % Mg2Si pseudoeutectic alloy, were measured by the d.c. four-point probe method. The dependency ofmicrohardness and electrical resistivity on growth rates were obtained as HV = 135.7 (V)0.09 and ρ = 17.30 × 10−8(V)0.08, respectively for Al–Mg2Si pseudoeutectic alloy. The results obtained in present work were compared with the previous similar experimental results.

About the authors

Yusuf Kaygısız

Department of Energy Systems Engineering, Ereğli Faculty of Engineering and Natural Sciences

Author for correspondence.
Email: ykaygisiz@konya.edu.tr
Turkey, Konya, 42310

Necmettin Maraşlı

Department of Metallurgical and Materials Engineering, Faculty of Chemistry and Metallurgical Engineering

Email: ykaygisiz@konya.edu.tr
Turkey, Davutpaşa-Esenler, İstanbul, 34210

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