Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells


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Abstract

This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.

About the authors

K. K. Nagaraja

Lebedev Physical Institute; National University of Science and Technology “MISiS”

Email: mityagin@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991; Leninskii pr. 4, Moscow, 119049

M. P. Telenkov

Lebedev Physical Institute; National University of Science and Technology “MISiS”

Email: mityagin@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991; Leninskii pr. 4, Moscow, 119049

I. P. Kazakov

Lebedev Physical Institute

Email: mityagin@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991

S. A. Savinov

Lebedev Physical Institute

Email: mityagin@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991

Yu. A. Mityagin

Lebedev Physical Institute; National Research Nuclear University “MEPhI”

Author for correspondence.
Email: mityagin@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

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