Email this article Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication
- Authors: Saraeva I.N.1, Ivanova A.K.1,2, Kudryashov S.I.1,3, Nastulyavichus A.A.1
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Affiliations:
- Lebedev Physical Institute
- National Research Nuclear University “MEPhI”
- National Research University of Information Technologies, Mechanics and Optics
- Issue: Vol 45, No 11 (2018)
- Pages: 353-355
- Section: Article
- URL: https://journal-vniispk.ru/1068-3356/article/view/228750
- DOI: https://doi.org/10.3103/S1068335618110076
- ID: 228750
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Abstract
Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm2) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.
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About the authors
I. N. Saraeva
Lebedev Physical Institute
Author for correspondence.
Email: insar@lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
A. K. Ivanova
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Email: insar@lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
S. I. Kudryashov
Lebedev Physical Institute; National Research University of Information Technologies, Mechanics and Optics
Email: insar@lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991; Kronverkskii pr. 49, St. Petersburg, 197101
A. A. Nastulyavichus
Lebedev Physical Institute
Email: insar@lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
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