Features of the Microstructure of the Surface Region of the Photoelectric Converter with a Porous Silicon Antireflection Film and an n+-p Junction Formed by Laser Radiation

Abstract

The microstructure of the surface region of the silicon photoelectric converter with an n⁺-p junction and an antireflection porous silicon film is studied by scanning electron microscopy and Raman spectroscopy methods. The n⁺-p junction was formed by laser irradiation of the surface of a porous silicon film containing a phosphorus impurity. It is shown that laser irradiation causes partial recrystallization of the porous silicon film and the n⁺-p junction formation within silicon crystallites.