Progress in the Design of New Photonics and Optoelectronics Elements Using Advantages of Contemporary Femto-Nanophotonics
- Authors: Arakelian S.1, Kucherik A.1, Kutrovskaya S.1, Khorkov K.1, Istratov A.1, Osipov A.1
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Affiliations:
- Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
- Issue: Vol 37, No 5 (2016)
- Pages: 494-506
- Section: Article
- URL: https://journal-vniispk.ru/1071-2836/article/view/247995
- DOI: https://doi.org/10.1007/s10946-016-9601-9
- ID: 247995
Cite item
Abstract
We consider experimentally and theoretically the detection of quantum states in nanocluster semiconductor/metal structures upon the registration of hopping/tunneling electrical conductivity and possible mechanisms of realization of such states. We obtain nanostructured thin films on the substrates using different technologies, including laser ablation of solid surfaces. We show that it is possible to control the properties of the films by varying the topology of such synthesized systems. We analyze the features arising due to the specific conductivity of granular media revealed by the measured current–voltage characteristics and electrical resistance dependences for nanocluster bimetallic films of different compositions.
About the authors
S. Arakelian
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Author for correspondence.
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
A. Kucherik
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
S. Kutrovskaya
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
K. Khorkov
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
A. Istratov
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
A. Osipov
Department of Physics and Applied Mathematics, A. G. Stoletov and N. G. Stoletov Vladimir State University
Email: arak@vlsu.ru
Russian Federation, Vladimir, 600000
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