电邮这篇文章 Study of Methods for Anisotropic Plasma-Chemical Etching of Low-k Layers with Protection of the Porous Structure of the Material
- 作者: Miakonkikh A.V.1, Gaidukasov R.A.1, Kuzmenko V.O.1
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隶属关系:
- Valiev Institute of Physics and Technology, RAS
- 期: 卷 118, 编号 2 (2023): THEMED SECTION: FUNDAMENTAL PROBLEMS OF MULTILEVEL METALLIZATION SYSTEMS FOR ULTRA-LARGE INTEGRATED CIRCUITS
- 页面: 88-94
- 栏目: THEMED SECTION: FUNDAMENTAL SCIENTIFIC RESEARCH IN THE FIELD OF NATURAL SCIENCES
- URL: https://journal-vniispk.ru/1605-8070/article/view/301146
- DOI: https://doi.org/10.22204/2410-4639-2023-118-02-88-94
- ID: 301146
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详细
The article summarizes the results of studying the processes of cryogenic plasma etching of low-k dielectrics for use in integrated circuit metallization systems with a node less than 10 nm. The mechanisms of film degradation during plasma etching are considered, and an approach based on the adsorption of condensed plasma-forming gas in pores is studied. Experimental results are presented concerning the development and application of methods for controlling the filling of film pores in situ. The results of studying the parameters of the plasma of bromine-containing gases (CF3Br and C2F4Br2) and the nature of the degradation of the chemical composition of films after etching are presented. For comparison, the same characteristics are given for the previously used CF4 plasma.
作者简介
Andrey Miakonkikh
Valiev Institute of Physics and Technology, RAS
编辑信件的主要联系方式.
Email: miakonkikh@ftian.ru
俄罗斯联邦, 34 Nakhimovsky Ave., Moscow, 117218, Russia
Rafael Gaidukasov
Valiev Institute of Physics and Technology, RAS
Email: gaydukasov.r@gmail.com
俄罗斯联邦, 34 Nakhimovsky Ave., Moscow, 117218, Russia
Vitaly Kuzmenko
Valiev Institute of Physics and Technology, RAS
Email: kuzmenko@ftian.ru
俄罗斯联邦, 34 Nakhimovsky Ave., Moscow, 117218, Russia
参考
- W. Volksen, R.D. Miller, G. Dubois Chem. Rev., 2010, 110(1), 56. doi: 10.1021/cr9002819.
- D. Shamiryan, M.R. Baklanov, S. Vanhaelemeersch, K. Maex J. Vac. Sci. Technol. B, 2002, 20(5), 1923. doi: 10.1116/1.1502699.
- A. Rezvanov, A.V. Miakonkikh, A.S. Vishnevskiy, K.V. Rudenko, M.R. Baklanov J. Vac. Sci. Technol. B, 2017, 35(2), 021204. doi: 10.1116/1.4975646.
- A. Zotovich, A. Rezvanov, R. Chanson, L. Zhang, N. Hacker, K. Kurchikov, S. Klimin, S.M. Zyryanov, D. Lopaev, E. Gornev, I. Clemente, A. Miakonkikh, K. Maslakov J. Phys. D, 2018, 51(32), 325202. doi: 10.1088/1361-6463/aad06d.
- A.A. Rezvanov, A.V. Miakonkikh, D.S. Seregin, A.S. Vishnevskiy, K.A. Vorotilov, K.V. Rudenko, M.R. Baklanov J. Vac. Sci. Technol. A, 2020, 38(3), 033005. doi: 10.1116/1.5143417.
- A. Miakonkikh, V. Kuzmenko, A. Efremov, K. Rudenko Vacuum, 2022, 200(5), 110991. doi: 10.1016/j.vacuum.2022.110991.
- H.G. Tompkins A User's Guide to Ellipsometry, USA, NY, New York, Academic Press, 1993, 260 pp. doi: 10.1016/C2009-0-22336-1.
- V. Rouessac, A. Lee, F. Bosc, J. Durand, A. Ayral Micropor. Mesopor. Mater., 2008, 111(1–3), 417. doi: 10.1016/j.micromeso.2007.08.033.
- T. Li, A.J. Senesi, B. Lee Chem. Rev., 2016, 116(18), 11128. doi: 10.1021/acs.chemrev.5b00690.
- D.W. Gidley, H.-G. Peng, R.S. Vallery Annu. Rev. Mater. Res., 2006, 36(1), 49. doi: 10.1146/annurev.matsci.36.111904.135144.
- A.A. Orlov, A.A. Rezvanov, A.V. Miakonkikh Nanoindustry Russ., 2020, 96(3s), 684. doi: 10.22184/1993-8578.2020.13.3s.684.687.
- S. Matsuo Appl. Phys. Lett., 1980, 36(9), 768. doi: 10.1063/1.91651.
- M. Engelhardt, S. Schwarz J. Electrochem. Soc., 1987, 134, 1985. doi: 10.1149/1.2100803.
- D.L. Flamm, P.L. Cowan, J.A. Golovchenko J. Vac. Sci. Tech., 1980, 17, 1341. doi: 10.1116/1.570667.
- D.V. Lopaev, Yu.A. Mankelevich, T.V. Rakhimova, A.I. Zotovich, S.M. Zyryanov, M.R. Baklanov J. Phys. D: Appl. Phys., 2017, 50, 485202. doi: 10.1088/1361-6463/aa92a7.
- S.V. Avtaeva, D.K. Otorbaev J. Phys. D: Appl. Phys., 1993, 26, 2148. doi: 10.1088/0022-3727/26/12/009.
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