Graphene/Silicon Photodiode Prepared via Lamination and Its Properties

Abstract

A simple technology is proposed for preparing a graphene/silicon photodiode with a Schottky barrier. CVD graphene is transferred to a polymer substrate via lamination. The polymer film with graphene is then glued to the surface of a silicon plate via thermal compression. The contacts are deposited on graphene and silicon with a silver paste. The photodiode obtained in this way has the following characteristics: sensitivity of 0.37 A/W, external quantum efficiency of 0.88, and normalized equivalent noise power of 1 pW/Hz^1/2. These data are obtained for a wavelength of 520 nm. The range of electromagnetic radiation detected with the photodetector is 320–1100 nm.