IMPROVING THE QUALITY OF PHOTODETECTORS USING ISOTOPIC NANOENGINEERING METHODS

Abstract

Abstract—The study considers the possibility of changing the isotopic composition of a substance to improve the physical properties of the material and the optoelectronic characteristics of a photodetector as the most common device in optoelectronics. It is shown that the reduction of heavy isotopes in the semiconductor material of photodetectors increases the mobility of charge carriers, the light absorption coefficient, and quantum efficiency, while reducing the number of band gap sublevels that affect the dark current. This increases the photodetector sensitivity, decreases the magnitude of the dark current, and improves the signal power to noise power ratio at the output of the photodetector. Technologies for improving the properties of a material by improving the characteristics of bulk semiconductor crystals, multiple quantum wells, and superlattices are compared.