Email this article Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods
- Authors: Prudnikov N.V.1,2, Korovin A.N.1, Emelyanov A.V.1,2, Malakhova Y.N.1,3, Demin V.A.1,2, Chvalun S.N.1, Erokhin V.V.1,4
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Affiliations:
- National Research Centre Kurchatov Institute
- Moscow Institute of Physics and Technology (National Research University)
- MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
- CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
- Issue: Vol 14, No 7-8 (2019)
- Pages: 380-384
- Section: Devices and Products Based on Nanomaterials and Nanotechnologies
- URL: https://journal-vniispk.ru/2635-1676/article/view/220824
- DOI: https://doi.org/10.1134/S1995078019040104
- ID: 220824
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Abstract
The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements made by spin-coating method have slower switching kinetics, which, presumably, is associated with relatively higher homogeneity of the film surface. This research may be useful for the development of polythiophene memristive devices with reproducible stable characteristics suitable for various applications: from memory elements to wearable and implantable electronics, and neuromorphic computing systems.
About the authors
N. V. Prudnikov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Author for correspondence.
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
A. N. Korovin
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182
A. V. Emelyanov
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
Y. N. Malakhova
National Research Centre Kurchatov Institute; MIREA—Russian Technological University, Institute of Fine Chemical Technologies named after Lomonosov
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182; Moscow, 119571
V. A. Demin
National Research Centre Kurchatov Institute; Moscow Institute of Physics and Technology (National Research University)
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudny, Moscow oblast, 141701
S. N. Chvalun
National Research Centre Kurchatov Institute
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182
V. V. Erokhin
National Research Centre Kurchatov Institute; CNR-IMEM (National Research Council, Institute of Materials for Electronics and Magnetism)
Email: nikprud321@gmail.com
Russian Federation, Moscow, 123182; Parma, 43124
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