Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures

Abstract

The results of studies on fast-neutron detectors application of homoepitaxial Me–p^––p⁺ structures are reported. Epitaxial boron doped (N_A = (4–8) × 10¹⁴ cm^–3) layers 65 μm thick were grown on highly boron doped HPHT diamond plates by CVD. The Schottky contact on epitaxial layer with 17 mm² area was fabricated by 30 nm Pt deposition. The Ti(30 nm)/Pt(30 nm)/Au(50 nm) metallization scheme was used as an ohmic contact on the backside of the p⁺ HPHT diamond plate. The fast-neutron detection efficiency measured on ²⁴¹Am–Be source at operational bias of 75 V (the depletion region is 10.6 µm) amounted to 6 × 10^–5 puls./neutron.