The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching

Abstract

The effect of the type of Si conductivity on the initiation and formation of pores in silicon samples during electrochemical etching was studied. The difference between the pore formation processes in n- and p-conducting silicon was attributed to the properties and the nature of layers formed in the initial period of etching on the Si surface. A possible composition of the layers formed on the Si surface was proposed considering the chemistry of Si interaction with the etching agent.