Special aspects of the photoluminescence of thermally annealed porous silicon layers

E. N. Abramova; A. M. Khort; A. G. Yakovenko; T. A. Sorokin; V. I. Shvets

doi:10.1134/S0012500817050044

Special aspects of the photoluminescence of thermally annealed porous silicon layers

作者: Abramova E.N.¹, Khort A.M.¹, Yakovenko A.G.¹, Sorokin T.A.¹, Shvets V.I.¹
隶属关系:
1. Institute of Fine Chemical Technologies
期: 卷 474, 编号 1 (2017)
页面: 113-115
栏目: Chemistry
URL: https://journal-vniispk.ru/0012-5008/article/view/153984
DOI: https://doi.org/10.1134/S0012500817050044
ID: 153984

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详细

The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.