Plasmonic Photoconductive Antennas for Terahertz Pulsed Spectroscopy and Imaging Systems


Дәйексөз келтіру

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Аннотация

We propose a terahertz (THz) plasmonic photoconductive antenna (PCA) with a record height of its metal electrodes of h = 100 nm and a high aspect ratio of h/p = 0.5 (p is the period of the plasmonic grating) that can be used as a source is THz pulsed spectroscopic and imaging systems. We experimentally demonstrate that the power of the THz radiation generated by the proposed plasmonic PCA is two orders of magnitude higher than that of an equivalent ordinary PCA without a plasmonic grating. Current–voltage measurements of the thus developed plasmonic PCA under femtosecond laser excitation show that the photocurrent of the PCA increases 15-fold, up to ip ≈ 1.2 mA. To reduce the leakage currents of the PCA, we propose a fabrication technology that is based on the etching of windows in a thin Si3N4 passivation dielectric layer deposited on the photoconductor surface, which makes it possible to reduce the dark current to id ≈ 5 μA.

Авторлар туралы

D. Lavrukhin

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

R. Galiev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105

A. Pavlov

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

A. Yachmenev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

M. Maytama

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

I. Glinskiy

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

R. Khabibullin

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

Yu. Goncharov

Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 119991

K. Zaytsev

Prokhorov General Physics Institute, Russian Academy of Sciences; Bauman Moscow State Technical University

Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 119991; Moscow, 105005

D. Ponomarev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991

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