Plasmonic Photoconductive Antennas for Terahertz Pulsed Spectroscopy and Imaging Systems
- Авторлар: Lavrukhin D.V.1,2, Galiev R.R.1, Pavlov A.Y.1,2, Yachmenev A.E.1,2, Maytama M.V.1,2, Glinskiy I.A.1,2, Khabibullin R.A.1,2, Goncharov Y.G.2, Zaytsev K.I.2,3, Ponomarev D.S.1,2
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Мекемелер:
- Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Bauman Moscow State Technical University
- Шығарылым: Том 126, № 5 (2019)
- Беттер: 580-586
- Бөлім: Biophotonics
- URL: https://journal-vniispk.ru/0030-400X/article/view/165997
- DOI: https://doi.org/10.1134/S0030400X19050199
- ID: 165997
Дәйексөз келтіру
Аннотация
We propose a terahertz (THz) plasmonic photoconductive antenna (PCA) with a record height of its metal electrodes of h = 100 nm and a high aspect ratio of h/p = 0.5 (p is the period of the plasmonic grating) that can be used as a source is THz pulsed spectroscopic and imaging systems. We experimentally demonstrate that the power of the THz radiation generated by the proposed plasmonic PCA is two orders of magnitude higher than that of an equivalent ordinary PCA without a plasmonic grating. Current–voltage measurements of the thus developed plasmonic PCA under femtosecond laser excitation show that the photocurrent of the PCA increases 15-fold, up to ip ≈ 1.2 mA. To reduce the leakage currents of the PCA, we propose a fabrication technology that is based on the etching of windows in a thin Si3N4 passivation dielectric layer deposited on the photoconductor surface, which makes it possible to reduce the dark current to id ≈ 5 μA.
Авторлар туралы
D. Lavrukhin
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
R. Galiev
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105
A. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
A. Yachmenev
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
M. Maytama
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
I. Glinskiy
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
R. Khabibullin
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
Yu. Goncharov
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 119991
K. Zaytsev
Prokhorov General Physics Institute, Russian Academy of Sciences; Bauman Moscow State Technical University
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 119991; Moscow, 105005
D. Ponomarev
Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: ponomarev_dmitr@mail.ru
Ресей, Moscow, 117105; Moscow, 119991
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