Plasmonic Photoconductive Antennas for Terahertz Pulsed Spectroscopy and Imaging Systems


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

We propose a terahertz (THz) plasmonic photoconductive antenna (PCA) with a record height of its metal electrodes of h = 100 nm and a high aspect ratio of h/p = 0.5 (p is the period of the plasmonic grating) that can be used as a source is THz pulsed spectroscopic and imaging systems. We experimentally demonstrate that the power of the THz radiation generated by the proposed plasmonic PCA is two orders of magnitude higher than that of an equivalent ordinary PCA without a plasmonic grating. Current–voltage measurements of the thus developed plasmonic PCA under femtosecond laser excitation show that the photocurrent of the PCA increases 15-fold, up to ip ≈ 1.2 mA. To reduce the leakage currents of the PCA, we propose a fabrication technology that is based on the etching of windows in a thin Si3N4 passivation dielectric layer deposited on the photoconductor surface, which makes it possible to reduce the dark current to id ≈ 5 μA.

作者简介

D. Lavrukhin

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

R. Galiev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105

A. Pavlov

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

A. Yachmenev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

M. Maytama

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

I. Glinskiy

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

R. Khabibullin

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

Yu. Goncharov

Prokhorov General Physics Institute, Russian Academy of Sciences

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 119991

K. Zaytsev

Prokhorov General Physics Institute, Russian Academy of Sciences; Bauman Moscow State Technical University

Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 105005

D. Ponomarev

Institute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences; Prokhorov General Physics Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: ponomarev_dmitr@mail.ru
俄罗斯联邦, Moscow, 117105; Moscow, 119991

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2019