Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique
- 作者: Blokhin S.A.1, Bobrov M.A.1, Blokhin A.A.1,2, Kuzmenkov A.G.2, Maleev N.A.1, Ustinov V.M.2, Kolodeznyi E.S.3, Rochas S.S.3, Babichev A.V.3, Novikov I.I.3, Gladyshev A.G.3, Karachinsky L.Y.1,4, Denisov D.V.4,5, Voropaev K.O.6,7, Ionov A.S.7, Egorov A.Y.3
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隶属关系:
- Ioffe Physical Technical Institute
- The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
- ITMO University
- OOO Connector Optics
- St. Petersburg Electrotechnical University LETI
- Yaroslav-the-Wise Novgorod State University
- OAO OKB-Planeta
- 期: 卷 127, 编号 1 (2019)
- 页面: 140-144
- 栏目: Laser Physics and Laser Optics
- URL: https://journal-vniispk.ru/0030-400X/article/view/166045
- DOI: https://doi.org/10.1134/S0030400X1907004X
- ID: 166045
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详细
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design of the laser provides a record low level of internal optical losses (less than 6.5 cm–1) and high efficiency of current injection (more than 90%) at room temperature, which allows the realization of submilliampere threshold currents. As the temperature rises to 85°C, the current injection efficiency drops to 70% due to the thermal emission of charge carriers from the active region, accompanied by an increase in internal optical losses to 9.1 cm–1 because of an increase in absorption on free carriers and/or intersubband absorption in the valence band.
作者简介
S. Blokhin
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Bobrov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Blokhin
Ioffe Physical Technical Institute; The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Kuzmenkov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Maleev
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Ustinov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
A. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
A. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
L. Karachinsky
Ioffe Physical Technical Institute; OOO Connector Optics
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194292
D. Denisov
OOO Connector Optics; St. Petersburg Electrotechnical University LETI
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194292; St. Petersburg, 197376
K. Voropaev
Yaroslav-the-Wise Novgorod State University; OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
俄罗斯联邦, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. Ionov
OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
俄罗斯联邦, Veliky Novgorod, 173004
A. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
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