Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design of the laser provides a record low level of internal optical losses (less than 6.5 cm–1) and high efficiency of current injection (more than 90%) at room temperature, which allows the realization of submilliampere threshold currents. As the temperature rises to 85°C, the current injection efficiency drops to 70% due to the thermal emission of charge carriers from the active region, accompanied by an increase in internal optical losses to 9.1 cm–1 because of an increase in absorption on free carriers and/or intersubband absorption in the valence band.

About the authors

S. A. Blokhin

Ioffe Physical Technical Institute

Author for correspondence.
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

M. A. Bobrov

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. A. Blokhin

Ioffe Physical Technical Institute; The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021

A. G. Kuzmenkov

The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

N. A. Maleev

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. M. Ustinov

The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

E. S. Kolodeznyi

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

S. S. Rochas

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

A. V. Babichev

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

I. I. Novikov

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

A. G. Gladyshev

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

L. Ya. Karachinsky

Ioffe Physical Technical Institute; OOO Connector Optics

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194292

D. V. Denisov

OOO Connector Optics; St. Petersburg Electrotechnical University LETI

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194292; St. Petersburg, 197376

K. O. Voropaev

Yaroslav-the-Wise Novgorod State University; OAO OKB-Planeta

Email: blokh@mail.ioffe.ru
Russian Federation, Veliky Novgorod, 173003; Veliky Novgorod, 173004

A. S. Ionov

OAO OKB-Planeta

Email: blokh@mail.ioffe.ru
Russian Federation, Veliky Novgorod, 173004

A. Yu. Egorov

ITMO University

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2019 Pleiades Publishing, Ltd.